High-power X- and Ka-band Gallium Nitride Amplifiers with Exceptional Efficiency

Achieving very high-power amplification with maximum efficiency at X- and Ka-band is a momentous task using solid-state technology. Gallium Arsenide (GaAs) has been the material of choice for high-power microwave systems at these frequencies for decades. Until only recently, GaAs was unchallenged at Ka-band for solid-state amplification. Unfortunately, the low power density of GaAs requires extensive combining networks contributing to large amplifier size and low efficiency; neither is acceptable in next-generation high-performance systems.

Auriga will use GaN high electron mobility transistors (HEMT) to push the envelope of power and efficiency currently achievable up to Ka-band. Producing this level of performance will require the use of sub-0.25 μm gate length devices.

Optimization Priorities:

• Bandwidth
• Linearity
• Efficiency

Balanced Solution:

Design and deliver GaN MMIC amplifiers that operate at X-band and Ka-band with up to 50 W CW output power and 60% efficiency. MMIC should be compact to minimize cost and provide convenient form factor for system insertion.