Innovative Balanced Solutions
Since 2007, when Auriga earned its first Small Business Innovation Research (SBIR) award, our creative and collaborative engineering team continue to deliver cutting-edge technology.
All solutions are designed for expedited integration into other programs, military branches, and industry applications.
High-power X- and Ka-band Gallium Nitride Amplifiers with Exceptional Efficiency
Achieving very high-power amplification with maximum efficiency at X- and Ka-band is a momentous task using solid-state technology. Gallium Arsenide (GaAs) has been the material of choice for high-power microwave systems at these frequencies for decades. Until only recently, GaAs was unchallenged at Ka-band for solid-state amplification. Unfortunately, the low power density of GaAs requires extensive combining networks contributing to large amplifier size and low efficiency; neither is acceptable in next-generation high-performance systems.
Auriga will use GaN high electron mobility transistors (HEMT) to push the envelope of power and efficiency currently achievable up to Ka-band. Producing this level of performance will require the use of sub-0.25 μm gate length devices.
Optimization Priorities:
- Bandwidth
- Linearity
- Efficiency
Balanced Solution:
Design and deliver GaN MMIC amplifiers that operate at X-band and Ka-band with up to 50 W CW output power and 60% efficiency. MMIC should be compact to minimize cost and provide convenient form factor for system insertion.
NASA O1.05: High-power X- and Ka-band Gallium Nitride Amplifiers with Exceptional Efficiency
X- and Ka-band MMIC amplifier with bleeding-edge power and efficiency