High-Power Integrated Radio Frequency (RF) Switches for Joint Tactical Radio Systems (JTRS)

This program addresses the demand for high-power RF switches for the Joint Tactical Radio System (JTRS), which includes software controlled reconfigurable RF hardware. Due to its reconfigurable nature, the JTRS requires a large number of RF switches in different configurations, such as single-pole multi-throw (SPMT) and multi-pole multi-throw (MPMT). In such multi-component switching blocks, use of traditional PIN-diodes possesses significant limitations on overall system performance due to high bias current consumption in the forward-biased state, relatively slow modulation speeds, vertical layout integration complications, and low temperature stability.

RF switches based on GaAs technology suffer from low-breakdown voltage and low-power handling. To make a high-power switch without the limitations of PIN or GaAs technologies, insulated gate Group III-nitride HFETs will be used. These devices are advantageous due to their higher power handling capability, temperature stability, and high reliability for switches and monolithically integrated switch arrays.

Balanced Solution:

Design and deliver a family of MPMT switches that operate across two decades of bandwidth (2 MHz – 2000 MHz), have less than 0.25 dB insertion loss, and capable of handling maximum RF powers up to 46 dBm.